GaN heterojunction FET device Fabrication, Characterization and Modeling
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چکیده
................................................................................................................................ 14 CHAPTER
منابع مشابه
2 . Fabrication of Mesfet for High - Current Operation
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We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm at 10 mV, and 17.7 A/cm peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable ne...
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The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...
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Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...
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